Beilstein J. Nanotechnol.2015,6, 2485–2497, doi:10.3762/bjnano.6.258
the benefit of surface photo voltage measurements, we analysed the contact potential difference of a silicon carbide p/n-junction under illumination.
Keywords: copper alloy; electrostatic force microscopy; high-voltagedevice; Kelvin probe force microscopy; silicon carbide (SiC); surface photo
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Figure 1:
a) Schematic view of the optical path allowing good visibility from the top to the tip–sample setup...